稳压器,LDO,2.9×2.8mm,SOT.0V,500mA,RTGB,RICHTEK
稳压器,LDO,2.9×2.8mm,SOT.5V,500mA,RTGB,RICHTEK
稳压器,LDO,2.9×2.8mm,SOTmA,1.2V,RTGB,RICHTEK
稳压器,LDO,3.1×3.0mm,SOTmA,3.3V,RT9167A-33GB,RICHTEK
稳压器,LDO,2.9×2.8mm,SOT.8V,500mA,RTGB,RICHTEK
无线收发芯片,EDGE/HSPA+ Transceiver IC,PG-WFWLB×5.3×0.8mm,0.40 mm,N/A,PMB5712A1,INFINEON
无线收发芯片,RF Transceiver IC,196 NSP,7.8×6.2×1.0mm,0.40 mm,N/A,RTRNSP-TR-0A-0,QUALCOMM
射频放大芯片模组,RF PA Module,Broadband PAM for Band pad,3.0×4.2×0.9 mm,N/A,SKY77758,SKYWORKS
射频放大芯片,RF PA,N/A,Small, low profile package,3*3*0.85 mm,N/A,SKY77709,SKYWORKS
射频放大芯片,RF PA,Quad-Band GSM/EDGE,15pin,5.00×3.50×0.90mm,N/A,TQM7M5050,TRIQUINT
射频功率放大器,RF PA,UMTS Band 4 PA,10pin,3×3×0.9 mm,N/A,ACPM-5504-TR1,AVAGO
射频功率放大器,RF PA,CDMA Dual Band Power Amplifier,14pin,4×5×0.9mm,N/A,ACPM-7353-TR1,AVAGO
MOS FET功放模块,MOS FET PA module,Quad-Band T×/semi-Quad R×,34pin,6.0×8.0×1 mm,With Antenna Switch,RPF89011B,RENESAS
射频功率放大器,RF PA,TD-SCDMA MM,10pad,3.0×3.0×0.85mm,N/A,SKYSKYWORKS
MOS FET功放模块,MOS FET PA module,Dual band Antenna Switch,34pin,6.0×8.0×1.0(max)mm,N/A,RPF89007B,RENESAS
射频功率放大器,RF PA,WCDMA/HSDPA/HSUPA/HSPA+/LTE,10pin,3.0×3.0×0.9 mm,LTE-Band V (MHz),SKY77704,SKYWORKS
音频放大器,Audio PA,1.42×1.42mm,9-ball WCSP,2W,class D,SN2145IY09E,SI-EN
内存芯片,MCP Memory,N/A,32 Gb,48 pin TSOP,20×12×1.2 mm,0.5 mm,3.3 V,NAND,H27UBG8T2BTR-BC,HYNIX
内存芯片,Memory,Spi Flash,128Mbit,WSON8 6*5-mm,6.00×5.00×0.75 mm,1.27 mm,1.8 V,N/A,W25Q128FWPIM,WINBOND
内存芯片,Memory,64M bit serial flash,,N/A,MLP8,6×5 mm,1 mm,1.8 V,N/A,N25W064A11EF640F,MICRON
内存芯片,MCP Memory,e.MMC+LPDDR2 S4 SDRAM,4 GB e.MMC+4 Gb(256 Mb x 16),FBGA162 ball,11.5×13×1.0 mm,0.5 mm,N/A,N/A,KMNJS000FM-B205,SAMSUNG
内存芯片,MCP Memory,DDR2 Mobile RAM,8Gb DDR2 Mobile RAM,216-ball FBGA,12×12×0.8mm,0.40 mm,1.2 V,POP,EDB8164B3PF-1D-F,ELPIDA
内存芯片,MCP Memory,LPDDR2-S4 SDRAM+LPDDR2-S4,4Gb+ 4Gb,216-ball FBGA,12×12×0.8mm,0.40 mm,1.2 V,PoP,K3PE7E700M-XGC1,SAMSUNG
内存芯片,MCP Memory,NAND Flash+Mobile DDR SDRAM,2Gb (128M x16)+1Gb (64M x16),153-ball FBGA,8×9×1.0mm,0.50 mm,1.8 V,N/A,K522H1HACF-B050,SAMSUNG